Semiconductor packages having wire bond wall to reduce coupling

ABSTRACT

A device (e.g., a Doherty amplifier) housed in an air cavity package includes one or more isolation structures over a surface of a substrate and defining an active circuit area. The device also includes first and second adjacent circuits within the active circuit area, first and second leads coupled to the isolation structure(s) between opposite sides of the package and electrically coupled to the first circuit, third and fourth leads coupled to the isolation structure(s) between the opposite sides of the package and electrically coupled to the second circuit, a first terminal over the first side of the package between the first lead and the third lead, a second terminal over the second side of the package between the second lead and the fourth lead, and an electronic component coupled to the package and electrically coupled to the first terminal, the second terminal, or both the first and second terminals.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a Divisional of co-pending, U.S. patent applicationSer. No. 14/261,387, filed on Apr. 24, 2014, which is aContinuation-in-Part of co-pending, U.S. patent application Ser. No.13/929,688, filed on Jun. 27, 2013.

FIELD OF USE

The present disclosure relates generally to device packages, and morespecifically, to device packages incorporating a wire bond wallstructure to reduce coupling between adjacent devices.

BACKGROUND

Wireless communication systems often employ power amplifiers forincreasing the power of a signal. In a wireless communication system, apower amplifier is usually the last amplifier in a transmission chain(the output stage). High gain, high linearity, stability, and a highlevel of power-added efficiency (i.e., the ratio of the differencebetween the output power and the input power to DC power) arecharacteristics of an ideal amplifier.

In general, a power amplifier operates at maximum power efficiency whenthe power amplifier transmits peak output power. However, powerefficiency tends to worsen as output power decreases. Recently, theDoherty power amplifier architecture has been the focus of attention notonly for base stations but also for mobile terminals because of thearchitecture's high power-added efficiency.

A Doherty power amplifier typically includes two or more amplifiers suchas a carrier amplifier and a peaking amplifier. These amplifiers areconnected in parallel with their outputs joined by an offsettransmission line, which performs impedance transformation. The peakingamplifier delivers current as the carrier amplifier saturates, therebyreducing the impedance seen at the output of the carrier amplifier.Thus, the carrier amplifier delivers more current to the load while thecarrier amplifier is saturated because of a “load-pulling” effect. Sincethe carrier amplifier remains close to saturation, a Doherty poweramplifier is able to transmit peak output power so that the totalefficiency of the system remains relatively high.

The high efficiency of the Doherty architecture makes the architecturedesirable for current and next-generation wireless systems. However, thearchitecture presents challenges in terms of semiconductor packagedesign. Current Doherty power amplifier semiconductor package designcalls for the use of discrete devices and integrated circuits that mayinvolve one device that includes the carrier amplifier and a separatedevice that includes the peaking amplifier. These discrete devices aremaintained a distance apart in the package in order to limit problemswith crosstalk that can occur between the carrier and peakingamplifiers.

One source of crosstalk in the semiconductor package architecture isbetween arrays of signal wires, referred to as wire bond arrays, thatmay be connected between the various electrical devices making up eachof the carrier and peaking amplifiers. That is, the performance of aDoherty power amplifier can be adversely affected by coupling (i.e., thetransfer of energy from one circuit component to another through ashared magnetic or electric field) between adjacent wire bond arrays ofthe corresponding components of the Doherty power amplifier. Couplingcan be of two types, electric (commonly referred to as capacitivecoupling) and magnetic (used synonymously with inductive coupling).Inductive or magnetic coupling occurs when a varying magnetic fieldexists between current carrying parallel conductors that are in closeproximity to one another, thus inducing a voltage across the receivingconductor.

Unfortunately, maintaining spatial distance between amplifiers in thepackage limits the potential for miniaturization of the semiconductorpackage. Limiting miniaturization is undesirable where low cost, a lowweight, and a small volume are important package attributes for variousapplications.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is illustrated by way of examples, embodimentsand the like and is not limited by the accompanying figures, in whichlike reference numbers indicate similar elements. Elements in thefigures are illustrated for simplicity and clarity and have notnecessarily been drawn to scale. The figures along with the detaileddescription are incorporated and form part of the specification andserve to further illustrate examples, embodiments and the like, andexplain various principles and advantages, in accordance with thepresent disclosure, where:

FIG. 1 is a block diagram of a Doherty power amplifier semiconductorpackage.

FIG. 2A is a top schematic view of the carrier and peaking amplifiercircuits of a Doherty power amplifier semiconductor package.

FIG. 2B is a perspective view of the Doherty power amplifiersemiconductor package of FIG. 2A.

FIGS. 3A and 3B are cross-sectional views of a package depictingalternative wire bond wall configurations.

FIG. 3C is a cross-sectional view of a device with a wire bond wallhoused in an air cavity package.

FIGS. 4A and 4B show the package of FIG. 2A where the wire bond wall isconnected to a number of additional devices.

FIGS. 5A and 5B are graphs showing test results for an example deviceincluding a wire bond wall separating a carrier amplifier and peakingamplifier.

DETAILED DESCRIPTION

The following detailed description is exemplary in nature and is notintended to limit the invention or the application and uses of the same.Furthermore, there is no intention to be bound by any expressed orimplied theory presented in the preceding technical field, background,or the following detailed description.

For simplicity and clarity of illustration, the drawing figuresillustrate the general manner of construction, and descriptions anddetails of well-known features and techniques may be omitted to avoidunnecessarily obscuring the invention. Additionally, elements in thedrawings figures are not necessarily drawn to scale. For example, thedimensions of some of the elements or regions in the figures may beexaggerated relative to other elements or regions to help improveunderstanding of embodiments of the invention.

The terms “first,” “second,” “third,” “fourth” and the like in thedescription and the claims, if any, may be used for distinguishingbetween similar elements and not necessarily for describing a particularsequential or chronological order. It is to be understood that the termsso used are interchangeable under appropriate circumstances such thatthe embodiments of the invention described herein are, for example,capable of operation in sequences other than those illustrated orotherwise described herein. Furthermore, the terms “comprise,”“include,” “have” and any variations thereof, are intended to covernon-exclusive inclusions, such that a process, method, article, orapparatus that comprises a list of elements is not necessarily limitedto those elements, but may include other elements not expressly listedor inherent to such process, method, article, or apparatus. The term“coupled,” as used herein, is defined as directly or indirectlyconnected in an electrical or non-electrical manner. As used herein theterms “substantial” and “substantially” mean sufficient to accomplishthe stated purpose in a practical manner and that minor imperfections,if any, are not significant for the stated purpose.

The present disclosure relates generally to device packages, and morespecifically, to device packages incorporating a wire bond wall toreduce coupling between adjacent devices formed within the package.

In one implementation, the package includes a Doherty amplifier lineup.In the present design, interference and/or cross-talk between the twoamplifiers of the Doherty amplifier (i.e., the carrier amplifier and thepeaking amplifier) is reduced so that the carrier and peaking amplifiersof the Doherty power amplifier may be implemented in a single package,referred to herein as a dual-path semiconductor package, with improvedefficiency. In various other implementations, it will be appreciatedthat the present system may be used in various packages that includemultiple components or circuits that are to be isolated from oneanother.

The present approach may be used to improve the usability of a Dohertypower amplifier semiconductor package in base station power amplifiers,cell phones, blue tooth devices, and other devices dependent uponsemiconductor packages, where low cost, low weight, and small volume aredesired. An embodiment described herein reduces inductive couplingbetween wire bond arrays in a Doherty power amplifier. However, it willbecome apparent that the techniques described below for reducinginductive coupling may be implemented in a variety of semiconductordevice designs.

FIG. 1 shows a block diagram of a Doherty power amplifier semiconductorpackage 20. Doherty power amplifier semiconductor package 20 includes acarrier amplifier circuit 22 and a peaking amplifier circuit 24connected in parallel. An input signal 26 is split into two signals byan input splitter 28. One of the resulting input signals is communicatedto an input 32 of carrier amplifier circuit 22, and another input signalis communicated to an input 36 of peaking amplifier circuit 24. Anoutput signal is communicated from an output 40 of carrier amplifiercircuit 22. Likewise, an output signal is communicated from an output 44of peaking amplifier circuit 24. The two output signals are combinedthrough a power combiner (PWR CMB) 46 to produce a combined outputsignal 48. Those skilled in the art will recognize that a Doherty poweramplifier semiconductor package typically includes additional electronicdevices and circuitry not shown herein for simplicity of illustration.

In one embodiment, carrier amplifier circuit 22 is configured to be onfor an entire range of output powers of Doherty power amplifiersemiconductor package 20. Peaking amplifier circuit 24 is configured toturn on only when carrier amplifier circuit 22 saturates. Power combiner46, operating to combine the output signal from carrier amplifiercircuit 22 with the output signal from peaking amplifier circuit 24 maybe a quarter-wave impedance inverter. The quarter-wave impedanceinverter can add a ninety degree lag to the output signal from carrieramplifier circuit 22. The phase of peaking amplifier circuit 24 istypically designed to lag carrier amplifier circuit 22 by ninety degreesso that the two output signals add in-phase when the output signals arecombined at the output of power combiner 46 to form combined outputsignal 48.

In the example shown in FIG. 1, each of carrier amplifier circuit 22 andpeaking amplifier circuit 24 may include a number of active and passiveelectrical elements. For example, carrier amplifier circuit 22 mayinclude a capacitor coupled to input 32. The capacitor can be coupled toa transistor, which applies the appropriate amplification to the inputsignal received at input 32. An output of the transistor can beconnected to a second capacitor. The capacitors can operate to conditionthe input signal received at input 32 and amplified by the transistor.Similarly, peaking amplifier 24 can include a capacitor coupled to input36. The capacitor can be coupled to a transistor, which applies theappropriate amplification to the input signal received at input 36. Anoutput of the transistor can be connected to a second capacitor. Thecapacitors can operate to condition the input signal received at input36 and amplified by the transistor. Those skilled in the art willrecognize that carrier amplifier circuit 22 and peaking amplifiercircuit 24 may include additional electronic devices not shown hereinfor simplicity of illustration.

In Doherty amplifier package 20, the separate electrical devices makingup each of carrier amplifier 22 and peaking amplifier 24 may beconnected to one another using multiple parallel wires, known as wirebonds. In a practical application, one or more of the signal paths(e.g., between inputs, outputs, capacitors and transistors thereof) ofcarrier amplifier circuit 22 may be established using wire bonds.Likewise, one or more of the signal paths (e.g., between inputs,outputs, capacitors and transistors thereof) of peaking amplifiercircuit 24 may be established using wire bonds.

In a Doherty power amplifier package, these various wire bond arrays maybe placed in very close proximity to one another due to their beingpackaged into a single housing. The small distances between the signalpaths of the various wire bonds interconnecting the components of eachamplifier can lead to relatively high levels of inductive couplingbetween adjacent wire bond arrays. This inductive coupling can limit thepower capability of an in-package Doherty amplifier.

Accordingly, in the present Doherty amplifier package, wire bond wall 50is formed between the two amplifiers 22 and 24 to provide electricalisolation between the wire bonds arrays of each amplifier (e.g., carrieramplifier 22 and peaking amplifier 24). Wire bond wall 50, as describedfurther below, is constructed from a number of wire bond connectionsformed within the package between the circuitry making up the carrierand peaking amplifiers. Wire bond wall 50, depending upon theimplementation of package 20, may be built on various substrates ordirectly upon a leadframe of package 20. Along with the other componentsof package 20, wire bond wall 50 may be over molded with encapsulant ormay be part of an air cavity package (e.g., air cavity package 70, FIG.3C). In various implementations, wire bond wall 50 may be connecteddirectly to ground or to a ground terminal which may, in turn beconnected to a ground voltage, or connected to various integratedpassive devices (IPDs) or other active devices and circuitry. Ingeneral, wire bond wall 50 operates as a shield or fence to interruptand prevent the inductive coupling between the carrier amplifier circuitand the peaking amplifier circuit of the Doherty amplifier.

FIG. 2A is a top schematic view of carrier amplifier 22 circuit andpeaking amplifier 24 circuit of Doherty power amplifier semiconductorpackage 20. FIG. 2B is a perspective view of Doherty power amplifiersemiconductor package 20 of FIG. 2A. Although the present example isexplained in terms of components of a Doherty amplifier, it should beunderstood that the present system and method may be employed to provideelectrical isolation for any circuits formed over a substrate, where thecomponents of a Doherty amplifier are only one example. In accordancewith the present disclosure, a wire bond wall may be utilized to providefor electrical isolation between any components, suitably configured,within a particular package. For example, with reference to FIGS. 2A and2B, carrier amplifier 22 may be replaced by any electrical circuitincluding a number of interconnected electrical devices and peakingamplifier 24 may be similarly replaced.

In package 20, carrier amplifier 22 includes input terminal 32 andoutput terminal 40, which, in a Doherty configuration, may constitute agate terminal and a drain terminal of carrier amplifier 22,respectively. Similarly, peaking amplifier 24 includes input terminal 36and output terminal 44, which, in a Doherty configuration, mayconstitute a gate terminal and a drain terminal of peaking amplifier 24,respectively.

Carrier amplifier 22 includes a number of electronic devices, such ascapacitors 100 and 104 and transistor 102 (having gate pad 103 and drainpad 105) manufactured and/or subsequently mounted to the surface of acommon (i.e., single) carrier, such as a package ground plane 74.Capacitors 100 and 104 may be, for example, Metal-Oxide-Semiconductor(MOS) capacitors mounted on ground plane 74. Similarly, peakingamplifier 24 includes a number of electrical devices, such as capacitors106 and 110 and transistor 108 (having gate pad 109 and drain pad 111)manufactured and/or subsequently mounted to the surface of a common(i.e., single) carrier, such as a package ground plane 74. Capacitors106 and 110 may be, for example, Metal-Oxide-Semiconductor (MOS)capacitors mounted on ground plane 74.

As shown in FIGS. 2A and 2B, the components of carrier amplifier 22(including capacitors 100 and 104, transistor 102, and terminals 32 and40) are connected by a number of wire bonds 112 forming an array of wirebonds. The components of peaking amplifier 24 (including capacitors 106and 110, transistor 108, terminals 36 and 44) are similarly connected bya number of wire bonds 114, themselves forming an array of wire bonds.In various implementations, any number of wire bonds may be used tointerconnect the various components of carrier amplifier 22 and peakingamplifier 24, or any other components that may be formed over a surfaceof ground plane 74.

In the depicted package 20, the symmetrical layout of carrier andpeaking amplifier circuits 22 and 24 can result in the correspondingcomponents of carrier amplifier circuit 22 being adjacent tocorresponding components of peaking amplifier circuit 24. Accordingly,the arrangement of various components of each amplifier (including,specifically, the wire bonds 112 and 114 of each amplifier carryinghigh-frequency signals) are adjacent to and geometrically parallel withone another. These attributes of the wire bond arrays of carrieramplifier 22 and peaking amplifier 24 can result in coupling between thedevices, which can reduce the performance of the overall device.

To minimize coupling between carrier amplifier 22 and peaking amplifier24, package 20 includes wire bond wall 50 separating carrier amplifier22 and peaking amplifier 24. Wire bond wall includes terminals 116 and118 which, in one implementation, can each be connected to ground. Anumber of connection pads 120 are formed over a surface of ground plane74. In one implementation, each of connection pads 120 are connected toa ground voltage, for example, by connecting the connection pads 120 toa ground plane (e.g., ground plane 74) of package 20 or to one or moreground terminals that can then be connected to a ground voltage. Anumber of wire bonds 122 are then formed between the connection pads 120and terminals 116 and 118. The position and geometrical configuration ofconnection pads 120 enables the various wire bonds 122 making up wirebond wall 50 to be separated by an appropriate pitch distance, dependingupon the implementation of package 20. In one implementation, the pitchdistance is between 5 and 6 millimeters (mm).

As a whole, wire bonds 122 form a wall or mesh of grounded wire bondsthat operate to electrically isolate carrier amplifier 22 from peakingamplifier 24. Wire bonds 122 may be formed of a suitable conductivemetal the same as or different from that of wire bonds 112 and/or 114.Example materials include gold, copper, aluminum, or silver. In oneimplementation, wire bond wall 50 and wire bonds 122 thereof operate asa passive device configured to absorb and, thereby, block or inhibit theelectric fields generated by carrier amplifier 22 and peaking amplifier24 from impinging upon one another. Depending upon the implementation,the configurations of wire bonds 122 may be adjusted or tuned to serveparticular needs, such as to block particular frequency ranges orparticular bandwidths. These adjustments may involve changing thelengths of the individual wire bonds 122 that make up wire bond wall 50and the degree to which the various wire bonds overlap one another. Onceformed, an encapsulant (not shown) may be deposited over package 20 toprovide physical protection to the wire bonds therefore, as well as theother components of package 20.

In various implementations, wire bond wall 50 includes a number of wirebonds that are formed along a route between two circuits or componentsthat are to be isolated from one another. When wire bond wall 50 runsalong a straight line, the wire bonds 122 making up wire bond wall 50are each formed generally parallel to one another. As shown in FIG. 2B,wire bond wall 50 may run along a route or pathway that is perpendicularto a line drawn between carrier amplifier 22 and peaking amplifier 24.Generally, wire bond wall 50 runs along a region of ground plane 74 thatis located between carrier amplifier 22 and peaking amplifier 24. Withinwire bond wall 50, the individual wire bonds 122 may be formed in asingle row, or, as depicted in FIG. 2A, multiple rows. FIG. 2A showswire bond wall 50 including three rows of wire bonds 122. Also, asdepicted in FIG. 2B, the wire bonds 122 making up wire bond wall 50 canconnect to every connection pad 120 of wire bond wall 50 or may, in somecases, skip over connection pads 120.

When a wire bond wall is made up of multiple rows of wire bonds, oneapproach for constructing the wire bond wall is to provide that, foreach connection pad, at least one wire bond from one row of the wirebond wall is connected to the connection pad and at least one wire bondfrom another row is not connected to the connection pad. This approachcan provide that the wire bonds making up the wire bond wall form a meshthat, when viewed from the side, has smaller openings than if the wirebonds of each row were to be identically connected.

In addition to running along a straight line, the wire bond wall may beformed along non-straight routes. In some cases, non-straight routes maybe called for by the layout and/or geometry of the circuitry beingisolated. In other implementations, the wire bond wall may be formedsubstantially around a particular circuit. This may enable a circuit inthe package to be isolated not only from other circuits in the package,but from radiation sources external to the package.

To illustrate some different configurations of wire bond wall 50, FIGS.3A and 3B are cross-section views of a package depicting alternativewire bond wall configurations. The cross-section could be taken, forexample, along line 3-3 shown in FIG. 2A, but illustrate different wirebond wall configurations than that shown in FIG. 2A. In FIG. 3A, wirebond wall 300 is formed by a number of wire bonds 302 interconnectingconnection pads 304 and terminals 116 and 118. A protective encapsulant306 is formed over wire bonds 302. In FIG. 3B wire bond wall 310 isformed by a number of wire bonds 312 over a ground plane or connectionpad structure 314 and interconnecting terminals 116 and 118. Aprotective encapsulant 316 is formed over wire bonds 312. Theconfiguration illustrated in FIG. 3B includes a greater number of wirebonds compared to that of FIG. 3A and, as such, the wire bond wall ofFIG. 3B, when viewed from the side, has greater density, reducing theaverage size of the openings in wire bond wall 50.

As mentioned above, rather than being over molded with encapsulant(e.g., as in packages 20 depicted in FIGS. 3A and 3B), a wire bond wall(and/or other circuitry coupled to terminals 116, 118) may be disposedin an air cavity of an air cavity package. For example, FIG. 3Cillustrates a device housed in an air cavity package 70. Among othercomponents, the device includes a wire bond wall 318 electricallyconnected between two terminals 326 and 328 of the air cavity package70.

More specifically, the device includes a substrate 320 and one or moreisolation structures 324 on or over the top surface of the substrate.The substrate 320 may be a flange formed from a solid conductivematerial (e.g., a copper flange), for example. Alternatively, thesubstrate 320 may be a multi-layered structure with a conductive topsurface. Either way, according to an embodiment, the substrate 320 maybe connected to ground.

The isolation structure(s) 324 may be formed from one or more materialsthat are substantially electrically insulating. For example, theisolation structure(s) 324 may be formed from ceramic, from organicprinted circuit board materials, or from other substantially insulatingmaterials. The isolation structure(s) 324 may include multiple distinctportions (e.g., a portion adjacent a first side 325 of the device, and aseparate portion adjacent a second side 327 of the device).Alternatively, a single isolation structure 324 may have a frame-shapedconfiguration with portions adjacent the sides 325, 327 of the device.Either way, sidewalls 329 of the isolation structure(s) 324 define anactive circuit area 331 (i.e., the area over the top surface of thesubstrate 320 between facing sidewalls 329).

The device also includes a first circuit (not illustrated, but analogousto carrier amplifier circuit 22) over the top surface of the substrate320 and within the active circuit area 331, and a second circuit (alsonot illustrated, but analogous to peaking amplifier circuit 24) over thetop surface of the substrate 320, within the active circuit area 331 andadjacent to the first circuit. First and second leads (not illustrated,but analogous to leads 32, 40) are coupled to portions of the isolationstructure 324 that are proximate to the first and second sides 325, 327of the package, and also are electrically coupled to the first circuit.In addition, third and fourth leads (not illustrated, but analogous toleads 36, 44) also are coupled to portions of the isolation structure324 that are proximate to the first and second sides 325, 327 of thepackage 70, and also are electrically coupled to the second circuit.

The device also includes a first terminal 326 over the first side 325 ofthe package 70 between the first lead and the third lead, and a secondterminal 328 over the second side 327 of the package 70 between thesecond lead and the fourth lead. For example, the first and secondterminals 326, 328 may be coupled to the top surface of the isolationstructure 324. The first and second terminals 326, 328 are analogous tofirst and second terminals 116, 118. In addition, the first and secondterminals 326, 328 each may be coupled to ground (or to other externalnodes).

The device also includes an electronic component coupled to the package70 and electrically coupled to the first terminal 326, the secondterminal 328, or both the first and second terminals 326, 328. As shownin FIG. 3C, the electronic component includes the wire bond wall 318. Aswith the previously-described embodiments, wire bond wall 318 may bepositioned between the first and second adjacent circuits (e.g., betweena carrier amplifier and a peaking amplifier), and thus may reducecoupling between the first and second circuits. Wire bond wall 318includes terminals 326 and 328 and wire bonds 330.

A number of connection pads (not shown, but analogous to connection pads304) or a connection pad structure 322 (analogous to connection padstructure 314) may be formed over or on a top surface of substrate 320.The wire bonds 330 are formed between the connection pads or connectionstructure 322 and terminals 326, 328. Alternatively, the wire bonds 330may be coupled directly to the top surface of substrate 320.

As with the previously described embodiments, wire bonds 330 form a wallor mesh of grounded wire bonds that operate to electrically isolate thefirst and second circuits (e.g., carrier amplifier 22 and peakingamplifier 24). To complete the package 70, a cap 332 may be placed overthe wire bond wall 318 and the circuitry within the active circuit area331, thus establishing an air cavity 334.

Although a particular configuration for wire bond wall 318 is depictedin FIG. 3C, it is to be understood that the wire bond wall may haveother configurations, as well (e.g., configurations illustrated in FIGS.2A, 2B, 3A, 3B, or other configurations). Generally, the configurationof wire bond wall 50, 300, 310, 318 is selected to absorb and therebyblock electromagnetic transmissions in a particular range offrequencies. In many cases, the frequencies being blocked are theoperating frequencies of the devices formed within the package. For agiven implementation, a number of candidate wire bond wallsconfigurations may be simulated where the various candidates includevarying numbers of wire bonds, varying lengths of wire bonds, varyingnumbers of rows of wire bonds, and a different number of overlappingwire bonds to determine their responses to particular input signals. Oneexample tool for performing such simulations includes HFSS, which is atool useful for antenna design. Then, in accordance with the desiredcircuit performance, a particular wire bond wall design can be selected.

In FIGS. 2A, 2B, 3A, 3B, and 3C, wire bond wall 50, 300, 310, 318 may begrounded or floating and generally operates as a passive component ofpackage 20, 70. In essence, when grounded, wire bond wall 50, 300, 310,318 operates as a tuned antenna configured to absorb the electromagneticemissions of either of carrier amplifier 22 and peaking amplifier 24 (orother circuitry) to prevent those emissions from impinging upon theother circuit.

In some implementations, wire bond wall 50, 300, 310, 318 may beconnected to one or more passive or active devices to further controland/or optimize the response of wire bond wall 50, 300, 310, 318. Theadditional devices may be formed within package 20, 70, or may beexternal to package 20, 70. To illustrate,

FIGS. 4A and 4B show package 20 where wire bond wall 50 is connected toa number of additional devices. As shown in FIG. 4A, wire bond wall 50is connected to IPD 400. IPD 400 may include combinations of resistors,capacitors, and inductors that are formed within package 20. Generally,a capacitance and/or inductance of IPD 400 will be selected so that,when connected to wire bond wall 50, the impedance of wire bond wall 50in combination with IPD 400 is tuned to block a desired range of signalfrequencies. This impedance matching serves to minimize the couplingbetween carrier amplifier 22 and peaking amplifier 24, thereby improvingthe efficiency of the package 20. By tuning the performance of the wirebond wall 50 by incorporating IPD 400, a reduction in coupling can beachieved over a particular frequency range. FIG. 4B illustrates analternative embodiment including two IPDs 402 and 404, where IPDs 402and 404 run parallel to one another. IPDs 402 and 404 are coupled towire bond wall 50. In various implementations, any number of IPDs may beprovided in combination with wire bond wall 50 to provide electricalisolation of the components of package 20. Similar embodiments may beimplemented with wire bond walls 300, 310, 318 and package 70.

In other implementations, wire bond wall 50, 300, 310, 318 may also beconnected to one or more active devices that may be configured to modifyan impedance of wire bond wall 50, 300, 310, 318 depending upon theoperational attributes of carrier amplifier 22 and peaking amplifier 24(or other circuits of package 20, 70) or other system components. Inthat case, the active devices may be tunable depending upon a particularoperating frequency of the circuits of package 20, 70, for example, tomeet particular frequency and/or bandwidth requirements.

In addition to providing the electrical isolation benefits describedabove, the present wire bond wall implementation is additionallybeneficial in that it may be constructed using similar fabricationtechniques that are used to manufacture the remainder of package 20, 70.The wire bonds of the wire bond wall can, in some implementations, befabricated using the same wire bonding techniques used to interconnectthe components of carrier amplifier 22 and peaking amplifier 24, forexample. This stands in contrast to some other isolation techniques thatmay require a radical redesign of the structure of package 20, 70. Forexample, if a solid metal wall were to be disposed between carrieramplifier 22 and peaking amplifier 24 in an attempt to provideelectrical isolation, entirely new fabrication techniques (and,potentially, machinery) would have be developed and utilized to installsuch a structure within an existing package design. In fact, in manycases, the packages would have to be entirely redesigned to incorporatesuch a component.

In simulation, embodiments of the present wire bond wall structure havedemonstrated improved performance over a conventional package. In onesimulation of a Doherty structure including a wire bond wall configuredin accordance with the depiction in FIG. 3B operating at approximately 2GHz, a grounded wire bond wall reduced detected coupling byapproximately 3 dB and a wire bond wall with integrated IPD reduceddetected coupling by approximately 1 7dB. For comparison, a reduction ofonly 5 dB was observed in simulations when a solid metal wall waspositioned between the components of the Doherty amplifier.

FIGS. 5A and 5B are graphs showing simulation results for an exampledevice including a wire bond wall configured in accordance with thedepiction of FIG. 3B separating a carrier amplifier and peakingamplifier within a single package, where the wire bond wall is connectedto a suitably configured IPD. The graphs depict an amount of couplingbetween nodes within the package (vertical axis, dB) versus frequency(horizontal axis, GHz). FIG. 5A depicts the test results as measuredbetween elements 105 and 44 of FIG. 2A. FIG. 5B depicts the test resultsas measured between elements 40 and 44 of FIG. 2A.

In FIG. 5A, line 502 shows the results for a conventional device(including no wire bond wall) and line 504 shows the results for thedevice of FIG. 2B (including the wire bond wall 50). As seen in FIG. 5A,there is a sharp reduction in coupling around the operational frequency(approximately 2 GHz) of the Doherty amplifier. In FIG. 5B, line 506shows the results for a conventional device (including no wire bondwall) and line 508 shows the results for the device of FIG. 2B(including the wire bond wall 50). As seen in FIG. 5A, there is a sharpreduction in coupling around the operational frequency (approximately 2GHz) of the Doherty amplifier. This reduction in coupling, provided bythe wire bond wall, enables more efficient operation of the amplifier.

The embodiments described above include wirebond structures (e.g.,wirebond walls 50, 300, 310, 318) coupled between input-side andoutput-side terminals (e.g., terminals 116, 118 or 326, 328) of adevice, where the input-side and output-side terminals are distinct fromterminals associated with the primary signal carrying paths (e.g.,terminals 32 and 40 associated with carrier amplifier circuit 22, andterminals 36 and 44 associated with peaking amplifier circuit 24). Inalternate embodiments, other types of electrical circuits and/orstructures may be coupled between such input-side and output-sideterminals (e.g., terminals 116, 118 or 326, 328) of a device. Forexample, rather than coupling wirebond structures between input-side andoutput-side terminals (e.g., terminals 116, 118 or 326, 328), circuitsthat include various combinations of passive components (e.g.,capacitors, inductors, and resistors) may be coupled between thoseinput-side and output-side terminals to tune resonance of a circuitwithin the device, improve video bandwidth of the device, provide DCfeed to portions of the device, and/or to otherwise alter theperformance characteristics of the device. Also, additional activestructures (e.g., transistors, diodes, and so on) can be placed insidethe package and connected to input-side and output-side terminals (e.g.,terminals 116, 118) to perform the same and/or different functions fromthose mentioned above.

Further, although the illustrated embodiments depict a single wire bondwall (50, 300, 310, 318) used to reduce coupling between two adjacentcircuits (e.g., carrier amplifier 22 and peaking amplifier 24), otherembodiments may include two or more wire bond walls used to reducecoupling between two or more sets of adjacent circuits. For example, anembodiment of a device may be implemented in a Doherty amplifier thatincludes a main amplifier circuit and two peaking amplifier circuits. Afirst wire bond wall may be used to reduce coupling between the mainamplifier circuit and the first peaking amplifier circuit, and a secondwire bond wall may be used to reduce coupling between the second peakingamplifier circuit and either the main amplifier circuit or the firstpeaking amplifier circuit (depending on which of those circuits thesecond peaking amplifier circuit is adjacent to).

An embodiment of a device housed in an air cavity package includes asubstrate having a top surface, and one or more isolation structuresover the top surface of the substrate. An area over the top surface ofthe substrate within sidewalls of the one or more isolation structuresdefines an active circuit area. The device also includes first andsecond circuits over the top surface of the substrate within the activecircuit area. The second circuit is adjacent to the first circuit. Thedevice also includes a first lead coupled to a portion of the one ormore isolation structures that is proximate to a first side of thepackage, a second lead coupled to a portion of the one or more isolationstructures that is proximate to a second side of the package, a thirdlead coupled to the portion of the one or more isolation structures thatis proximate to the first side of the package, a fourth lead coupled tothe portion of the one or more isolation structures that is proximate tothe second side of the package, a first terminal over the first side ofthe package between the first lead and the third lead, a second terminalover the second side of the package between the second lead and thefourth lead, and an electronic component coupled to the package andelectrically coupled to the first terminal, the second terminal, or boththe first and second terminals. The first lead is electrically coupledto the first circuit, the second lead is electrically coupled to thefirst circuit, the third lead is electrically coupled to the secondcircuit, and the fourth lead is electrically coupled to the secondcircuit.

An embodiment of a Doherty amplifier package includes a substrate havinga top surface, and one or more isolation structures over the top surfaceof the substrate. An area over the top surface of the substrate withinsidewalls of the one or more isolation structures defines an activecircuit area. The package also includes a carrier amplifier over the topsurface of the substrate within the active circuit area, and a peakingamplifier over the top surface of the substrate within the activecircuit area and adjacent to the carrier amplifier. The package alsoincludes a first lead coupled to a portion of the one or more isolationstructures that is proximate to a first side of the package, a secondlead coupled to a portion of the one or more isolation structures thatis proximate to a second side of the package, a third lead coupled tothe portion of the one or more isolation structures that is proximate tothe first side of the package, a fourth lead coupled to the portion ofthe one or more isolation structures that is proximate to the secondside of the package, a first terminal over the first side of the packagebetween the first lead and the third lead, a second terminal over thesecond side of the package between the second lead and the fourth lead,and an electronic component coupled to the package and electricallycoupled to the first terminal, the second terminal, or both the firstand second terminals. The first lead is electrically coupled to an inputto the carrier amplifier, the second lead is electrically coupled to anoutput of the carrier amplifier, the third lead is electrically coupledto an input to the peaking amplifier, and the fourth lead iselectrically coupled to an output of the peaking amplifier.

An embodiment of a method of making a device housed within a packageincludes attaching one or more isolation structures to a top surface ofa substrate, where an area over the top surface of the substrate withinsidewalls of the one or more isolation structures defines an activecircuit area. The method also includes attaching a first lead to aportion of the one or more isolation structures that is proximate to afirst side of the package, attaching a second lead to a portion of theone or more isolation structures that is proximate to a second side ofthe package, attaching a third lead to the portion of the one or moreisolation structures that is proximate to the first side of the package,attaching a fourth lead to the portion of the one or more isolationstructures that is proximate to the second side of the package,attaching a first terminal between the first lead and the third lead,and attaching a second terminal between the second lead and the fourthlead. The method also includes attaching a first circuit over the topsurface of the substrate within the active circuit area, andelectrically coupling the first circuit between the first and secondleads, attaching a second circuit over the top surface of the substratewithin the active circuit area and adjacent to the first circuit, andelectrically coupling the second circuit between the third and fourthleads, and attaching an electronic component to the package, andelectrically coupling the electronic component to the first terminal,the second terminal, or between both the first and second terminals.

Although the present disclosure describes specific examples,embodiments, and the like, various modifications and changes can be madewithout departing from the scope of the present disclosure as set forthin the claims below. For example, although the exemplary methods,devices, and systems described herein are in conjunction with aconfiguration for the aforementioned device, the skilled artisan willreadily recognize that the exemplary methods, devices, and systems maybe used in other methods, devices, and systems and may be configured tocorrespond to such other exemplary methods, devices, and systems asneeded. Further, while at least one embodiment has been presented in theforegoing detailed description, many variations exist. Accordingly, thespecification and figures are to be regarded in an illustrative ratherthan a restrictive sense, and all such modifications are intended to beincluded within the scope of the present disclosure. Any benefits,advantages, or solutions to problems that are described herein withregard to specific embodiments are not intended to be construed as acritical, required, or essential feature or element of any or all of theclaims.

What is claimed is:
 1. A method of making a device housed within apackage that includes a substrate, the method comprising the steps of:defining an active circuit area over the top surface of the substrate;positioning a first lead above the substrate and proximate to a firstside of the package; positioning a second lead above the substrate andproximate to a second side of the package; positioning a third leadabove the substrate and proximate to the first side of the package;positioning a fourth lead above the substrate and proximate to thesecond side of the package; attaching a first circuit over the topsurface of the substrate within the active circuit area; electricallycoupling the first circuit between the first and second leads; attachinga second circuit over the top surface of the substrate within the activecircuit area and adjacent to the first circuit; electrically couplingthe second circuit between the third and fourth leads; coupling aplurality of connection pads over the substrate in a row between thefirst circuit and the second circuit; positioning a first terminalbetween the first lead and the third lead; positioning a second terminalbetween the second lead and the fourth lead; and electrically coupling awire bond wall to the first terminal, the second terminal, or both thefirst and second terminals, wherein the wire bond wall includes a wirebond having a first end coupled to a first one of the connection padsand a second end coupled to a second one of the connection pads.
 2. Themethod of claim 1, wherein the wire bond wall is coupled between thefirst terminal and the second terminal, and the wire bond wall isconfigured to reduce an electromagnetic coupling between the firstcircuit and the second circuit during an operation of at least one ofthe first circuit and the second circuit.
 3. The method of claim 1,wherein the wire bond wall includes one or more additional wire bondsthat electrically interconnect the connection pads.
 4. The method ofclaim 1, wherein the wire bond wall is connected to one or moreintegrated passive devices.
 5. The method of claim 1, furthercomprising: coupling one or more isolation structures to the top surfaceof the substrate, wherein an area over the top surface of the substratewithin sidewalls of the one or more isolation structures defines theactive circuit area; and coupling a lid to the one or more isolationstructures.
 6. The method of claim 1, wherein the substrate includes aconductive flange.
 7. A method of making a device housed within apackage that includes a substrate, the method comprising the steps of:coupling a first circuit to a top surface of the substrate; coupling asecond circuit to the top surface of the substrate and adjacent to thefirst circuit; arranging a plurality of connection pads over thesubstrate in a row between the first circuit and the second circuit; andcoupling a wire bond wall to the plurality of connection pads, whereinthe wirebond wall includes a first wire bond having two ends coupled toa first set of two of the connection pads, and a second wire bond havingtwo ends coupled to a second set of two of the connection pads.
 8. Themethod of claim 7, wherein at least one of the plurality of connectionpads is electrically coupled to the substrate.
 9. The method of claim 7,further comprising: positioning a first lead proximate to a first sideof the package; electrically coupling the first lead to the firstcircuit; positioning a second lead proximate to a second side of thepackage; electrically coupling the second lead to the first circuit;positioning a third lead proximate to the first side of the package;electrically coupling the third lead to the second circuit; positioninga fourth lead proximate to the second side of the package; electricallycoupling the fourth lead to the second circuit; positioning a firstterminal over the first side of the package between the first lead andthe third lead; positioning a second terminal over the second side ofthe package between the second lead and the fourth lead; andelectrically coupling the wire bond wall to the first terminal, thesecond terminal, or both the first and second terminals.
 10. The methodof claim 9 wherein the first circuit includes a first power amplifiercircuit, and the second circuit includes a second power amplifiercircuit.
 11. The method of claim 10, wherein the first power amplifiercircuit includes a first transistor, and the second power amplifiercircuit includes a second transistor, and wherein at least some of theplurality of connection pads are positioned between the first transistorand the second transistor.
 12. A method of making a portion of a Dohertyamplifier housed within a package, the method comprising the steps of:defining an active circuit area over the top surface of the substrate;positioning a first lead above the substrate and proximate to a firstside of the package; positioning a second lead above the substrate andproximate to a second side of the package; positioning a third leadabove the substrate and proximate to the first side of the package;positioning a fourth lead above the substrate and proximate to thesecond side of the package; attaching a carrier amplifier over the topsurface of the substrate within the active circuit area; electricallycoupling the carrier amplifier between the first and second leads;attaching a peaking amplifier over the top surface of the substratewithin the active circuit area and adjacent to the first circuit;electrically coupling the peaking amplifier between the third and fourthleads; coupling a plurality of connection pads over the substrate in arow between the carrier amplifier and the peaking amplifier; andelectrically coupling a wire bond wall to a first terminal positionedbetween the first and third leads, to a second terminal positionedbetween the second and fourth leads, or to both the first and secondterminals, wherein the wire bond wall includes a wire bond having afirst end coupled to a first one of the connection pads and a second endcoupled to a second one of the connection pads.
 13. The method of claim12, wherein the plurality of wire bonds are connected to an integratedpassive device.
 14. The method of claim 13, wherein the integratedpassive device has at least one of a capacitance and an inductanceselected to reduce an electromagnetic coupling between the carrieramplifier and the peaking amplifier over a range of frequencies duringthe operation of at least one of the carrier amplifier and the peakingamplifier.
 15. The method of claim 12, wherein the wire bond wallincludes: a first row of wire bonds that includes the first wire bondconnected to the first set of two of the connection pads, and at leastone additional first wire bond connected to a third set of the pluralityof connection pads; and a second row of wire bonds that includes thesecond wire bond connected to the second set of two of the connectionpads, and at least one additional second wire bond connected to a fourthset of the plurality of connection pads, wherein the connection pads inthe first and third sets of connection pads are positioned between theconnection pads in the second and fourth sets of connection pads so thatthe wire bond wall forms a mesh.